Full Area Coverage Monolayer MoS2 on c-cut Sapphire

This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Sample Properties.

Specifications

1)     Full coverage 100% monolayer MoS2 uniformly covered across c-cut sapphire.

2)    . One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)     Atomically smooth surface with roughness < 0.15 nm.

4)     Highly uniform surface morphology. MoS2 monolayers uniformly cover across the sample.

5)    99.9995% purity as determined by nano-SIMS measurements

6)     Repeatable Raman and photoluminescence response

7)     High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)     c-cut Sapphire but our research and development team can transfer MoS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

9)     MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using -bombardment technique.

Supporting datasets [for 100% Full area coverage on c-cut Sapphire]

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer MoS2 on c-cut sapphire confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.